The Forum on the Science and Technology of Silicon Materials was founded
by Professor Emeritus Koji Sumino (Tohoku University) in 1997, and the
first two forums were held in 1997 and 1999 at Kazusa Academia Park in
Chiba Prefecture. Following them, the third and fourth forums were held
in 2001 and 2003 at the Shonan Village Center of Hayama-cho in Kanagawa
Prefecture. The last one was held in 2007 at Toki Messe in Niigata Prefecture.
The fundamental policy of the forum has been: (1) the promotion of the
mutual cooperation between the people in the industry and the academia,
(2) the education and stimulation of young scientists and engineers, and
(3) the realization of face-to-face discussion on various issues concerning
silicon materials at the international level. The forum has played an important
role in the field of the science and technology of silicon materials, as
one of a few international conferences that Japanese scientists and engineers
voluntarily organize. The numbers of participants has been 50-100 persons,
depending on the business environment of semiconductor industries. The
scope of the forum has been extended from the original topics (growth technologies
of bulk silicon and epi wafers, characterization and control of defects
and impurities, gettering and wafer technologies etc.) to SIMOX, SOI, SGOI
and strained wafer technologies, SiC for high-power devices, solar cells
and photovoltaic materials.
The present forum, the 6th one, was organized by the Organizing Committee
comprised of 25 members last year. The committee decided to move the location
of the forum to Okayama, which is the first place located in the western
area of Japan. The present forum has been for the first time co-organized
by The 145th Committee on Processing and Characterization of Crystals of
Japan Society for the Promotion of Science (JSPS) together by the Organizing
Committee of the Silicon Materials Science and Technology Forum. The scope
of the present forum is further extended from those of the past forums
to various new application fields including Si photonics and Si MEMS. Thanks
to the outstanding teamwork of the Organizing Committee, we have gathered
more than 60 papers and more than 100 participants for the present forum.
We expect a wide variety of interesting presentations and heated, fruitful
discussion throughout the forum. We believe that the present forum will
mark an important milestone in the progress of the science and technology
of silicon materials.
We have five invited speakers from abroad: Dr. G. Kissinger (IHP, Germany),
Prof. J. Vanhellemont (Ghent Univ., Belgium), Dr. J. Michel (MIT, USA),
Dr. M. Schubert (Fraunhofer ISE, Germany) and Dr. B. Sopori (NREL, USA).
On behalf of the Organizing Committee, we are grateful to them for their
outstanding contribution to the forum with their interesting talks, stimulating
discussion and comprehensive papers contributing to this volume of the
proceedings. We are also very thankful all of domestic invited speakers
for their contribution to the forum with their talks, discussion and papers,
all of which play important roles to enhance the forum activities. Finally,
we thank all the attendees for their contribution by presenting posters
and papers and participating in discussion.
We would like to express our sincere thanks to the Industry Club of Japan
for their financial contribution for partial support of the cost associated
with preparing this volume of proceedings by “Special Fund for the Promotion
of Science” which was made available by Japan Society for the Promotion
of Science (JSPS).
October 20, 2010
Yoichi Kamiura
Hiroshi Yamada-Kaneta
Susumu Murakami
Haruhiko Ono
Koichi Kakimoto
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