シリコン材料の科学と技術フォーラム2010 　　The Forum on the Science and Technology of Silicon Materials 2010

14 Nov.（Sun) 16:00-19:00 Registration 18:00-20:00 Welcome Party 15 Nov. (Mon) AM 8:25-8:35    Opening address 　　Y. Kamiura (Okayama Univ.)  8:35-9:00 In Remembrance of Prof. Goesele Chair: Y. Kamiura   8:35-9:00   K. Wada (Univ. of Tokyo)  Farewell Ulrich Goesele 9:00-10:40 Crystal Growth Chair: K. Kashima　　Co-chair: K. Sueoka   9:00-9:40   T. Abe (ShinEtsu Handotai) 　Point Defects in Silicon Melt Growth from the Experimental Results   9:40-10:10   A. Ikari （Siltronic Japan ） 　450 mm Wafer Generation - Challenges for the Silicon Producer   10:10-10:40  T. Taishi (Shinshu Univ.) 　Czochralski Germanium Crystal Growth with Low Dislocation Density and Oxygen Impurities 10:40-11:00 Coffee Break 11:00-12:40 Defect Control and Characterization Chair: H. Yamada-Kaneta　　Co-chair: H. Ono   11:00-11:40 G. Kissinger（IHP） 　Initial Stages Oxygen and Vacancy Agglomeration: Kinetics and Getter Effects   11:40-12:10 S. Kohyama (Covalent) 　Technology Trends and Business Challenges in Silicon Wafer Industry   12:10-12:40 K. Saga (Sony) 　Process-induced Metal Contamination in Silicon Substrate and its Gettering Behavior 12:40-13:40 Lunch PM 13:40-15:10 Defect Characterization  Chair: H. Ono　　Co-chair: Y. Kamiura   13:40-14:10 K. Tanahashi 　（Fujitsu Semi.） 　Progress of Silicon Wafer for Advanced CMOS LSI (tentative)   14:10-14:40 T. Sekiguchi (NIMS) 　EBIC and Cathodoluminescence Study on the Grain Boundaries and Fe Impurities in Multicrytstalline Si for Solar Cell Application   14:40-15:10 T. Takahashi 　(Univ. of Tokyo) 　Nano-probe Characterization of Multicrystalline Si Solar Cell Materials 15:10-15:30 Coffee Break 15:30-17:10 SiGe，Ge Chair: H. Nakashima　　Co-chair: K. Sueoka   15:30-16:10 J. Vanhellemont （Ghent Univ.） 　Intrinsic Point Defect Clustering During Czochralski Growth of Silicon and Germanium   16:10-16:40 S. Takagi (Univ. of Tokyo) 　Prospective and Critical Issues of Ge-based CMOS Devices   16:40-17:10 T. Tezuka (Toshiba R&D) 　Fabrication Process of SiGe-on-insulator (SGOI) Substrates for CMOS Applications 17:10-17:30 Coffee Break 17:30-19:00 Short presentation    Chair: Y. Yoshida 19:00-20:00 Supper 20:00-21:30 Poster session   Chair: Y. Yoshida 16 Nov. (Tue) AM 8:30-10:10 Si Photonics  Chair: Y. Ishikawa　　Co-chair: K. Wada   8:30-9:10 J. Michel (MIT) 　Monolithic Germanium Photonic Devices on Silicon   9:10-9:40 K. Yamada （NTT） 　Integrated Silicon Photonics for Telecommunications Applications   9:40-10:10 T. Baba 　(Yokohama Nat'l Univ.) 　Silicon Photonics 10:10-10:30 Coffee Break 10:30-12:00 ＭＥＭＳ  Chair: T. Sato　　Co-chair: H. Yamada-Kaneta   10:30-11:00 R. Okada （Hitachi) 　MEMS Sensor and Trend of the Market   11:00-11:30 T. Ishikawa 　(Hiroshima Univ.) 　On-chip Immunoassay Using Magnetic Beads Manipulation   11:30-12:00 J. Yan (Tohoku Univ.) 　Micro Machining of Silicon, Germanium and Silicon Carbide PM 12:00 Group photo 12:30-18:00 Excursion 18:00-21:30 Banquet 17 Nov. (Wed) AM 8:30-10:00 SiC, Power Si Chair: N. Ohtani 　　Co-chair: S. Murakami   8:30-9:00 T. Kimoto (Kyoto Univ.) 　Progress in Defect Control of SiC for Power Device Applications   9:00-9:30 S. Nishizawa (AIST) 　Next Generation Wafer Technology for Green Electronics Age   9:30-10:00 T. Sugiyama 　(Toyota R&D) 　Silicon Power Devices in Automotive Applications 10:00-10:20 Coffee Break 10:20-12:00 Solar Cell  Chair: K. Kakimoto　　Co-chair: M. Shabani   10:20-11:00 B. Sopori（NREL） 　Defects in Multicrystalline Silicon: Their Influence on the Solar Cell Performance   11:00-11:30 S. Wakamatsu 　（Tokuyama） 　A New Solar Grade Silicon and The Application To Multiclystalline Solar Cell   11:30-12:00 N. Usami 　（Tohoku Univ.） 　Toward Realization of High-quality Multicrsytalline Silicon for Solar Cells 12:00-12:40 Snack PM 12:40-14:30 Solar Cell  Chair: Y. Ohshita　　Co-chair: T.Sekiguchi   12:40-13:20 M. Schubert 　　(Fraunhofer) 　Characterization of Silicon for Photovoltaics   13:20-13:50 N. Iwamoto （JFS） 　Study on the Fixed Abrasive Diamond Wire Saw Slicing of Silicon Ingot for Photovoltaic Applications   13:50-14:20 M. Tajima (JAXA) 　Donor-Acceptor Pair Luminescence and its Application to Impurity Analysis in Solar-Grade Si 14:20-14:30 Closing remarks    　Y. Kamiura (Okayama Univ.)

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