1114ϊiϊj
| 16:00-19:00 |
Registration |
| 18:00-20:00 |
Welcome Party |
1115ϊij
| 8:25-8:35 |
Opening address |
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| 8:35-9:00 |
GoeselζΆΗZbV |
ΐ·: γYmκ |
| |
8:35-9:00 |
acκΐiεj |
Farewell Ulrich Goesele |
| 9:00-10:40 |
»¬· |
ΐ·: κϊZC ͺ_‘ |
| |
9:00-9:40 |
’FviMzΌ±Μj |
@Point Defects in Silicon Melt Growth from the Experimental Results |
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9:40-10:10 |
τ ΦiVgjbNj |
@450 mm Wafer Generation - Challenges for the Silicon Producer |
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10:10-10:40 |
Ύqq₯iMBεj |
@Czochralski Germanium Crystal Growth with Low Dislocation Density and
Oxygen Impurities |
| 11:00-12:40 |
Χ§δ₯]Ώ |
ΐ·: ΰc° C ¬μtF |
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11:00-11:40 |
G. KissingeriIHPj |
@Initial Stages Oxygen and Vacancy Agglomeration: Kinetics and Getter Effects
|
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11:40-12:10 |
R WiRogj |
@Technology Trends and Business Challenges in Silicon Wafer Industry |
| |
12:10-12:40 |
΅γKκY(\j[j |
@Process-induced Metal Contamination in Silicon Substrate and its Gettering
Behavior |
| 13:40-15:10 |
Χ]Ώ |
ΐ·: ¬μtF C γYmκ |
| |
13:40-14:10 |
I΄lixmΚMEj |
@Progress of Silicon Wafer for Advanced CMOS LSI (tentative) |
| |
14:10-14:40 |
Φϋ²jiNIMSj |
@EBIC and Cathodoluminescence Study on the Grain Boundaries and Fe Impurities in Multicrytstalline Si for Solar Cell Application |
| |
14:40-15:10 |
΄τρiεΆ€j |
@Nano-probe Characterization of Multicrystalline Si Solar Cell Materials |
| 15:30-17:10 |
SiGeCGe |
ΐ·: ° C ͺ_‘ |
| |
15:30-16:10 |
J. Vanhellemont
@iGhent Univ.j |
@Intrinsic Point Defect Clustering During Czochralski Growth of Silicon and Germanium
|
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16:10-16:40 |
ΨMκiεj |
@Prospective and Critical Issues of Ge-based CMOS Devices |
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16:40-17:10 |
θΛ ΧiΕj |
@Fabrication Process of SiGe-on-insulator (SGOI) Substrates for CMOS Applications |
| 20:00-21:30 |
|X^[ZbV |
ΐ·: gcL |
1116ϊiΞj
| 8:30-10:10 |
SitHgjNX |
ΐ·: ΞμυF C acκΐ |
| |
8:30-9:10 |
J. Michel (MIT) |
@Monolithic Germanium Photonic Devices on Silicon |
| |
9:10-9:40 |
Rc_‘iNTTj |
@Integrated Silicon Photonics for Telecommunications Applications |
| |
9:40-10:10 |
nκrFi‘lεj |
@Silicon Photonics |
| 10:30-12:00 |
ldlr |
ΐ·: ²‘Fό C ΰc° |
| |
10:30-11:00 |
ͺcΊρiϊ§) |
@MEMS Sensor and Trend of the Market |
| |
11:00-11:30 |
ΞμqOiLε) |
@On-chip Immunoassay Using Magnetic Beads Manipulation |
| |
11:30-12:00 |
θ
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@Micro Machining of Silicon, Germanium and Silicon Carbide |
1117ϊi
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| 8:30-10:00 |
SiCEp[Si |
ΐ·: εJ Έ C Ίγ i |
| |
8:30-9:00 |
Ψ{P¨iεj |
@Progress in Defect Control of SiC for Power Device Applications |
| |
9:00-9:30 |
ΌΰVLκ(Y€) |
@Next Generation Wafer Technology for Green Electronics Age
|
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9:30-10:00 |
R²piLc€j |
@Silicon Power Devices in Automotive Applications |
| 10:20-12:00 |
Ύzdr |
ΐ·: `{_κ@C Voj[ |
| |
10:20-11:00 |
B. SoporiiNRELj |
@Defects in Multicrystalline Silicon: Their Influence on the Solar Cell Performance |
| |
11:00-11:30 |
αΌ qigN}j |
@A New Solar Grade Silicon and The Application To Multiclystalline Solar Cell |
| |
11:30-12:00 |
F²όΏ²ikεj |
@Toward Realization of High-quality Multicrsytalline Silicon for Solar Cells |
| 12:40-14:30 |
Ύzdr |
ΐ·: ¬Έϊu@CΦϋ²j |
| |
12:40-13:20 |
M. Schubert
@@(Fraunhofer) |
@Characterization of Silicon for Photovoltaics |
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13:20-13:50 |
β{ΌviJFSj |
@Study on the Fixed Abrasive Diamond Wire Saw Slicing of Silicon Ingot for Photovoltaic Applications |
| |
13:50-14:20 |
cΉv(JAXA) |
@Donor-Acceptor Pair Luminescence and its Application to Impurity Analysis
in Solar-Grade Si |
| 14:20-14:30 |
Closing remarks |
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