2018.10.30 Program (Time table with poster number is here.)
18
Nov. （Sun）
19
Nov. （Mon）
| 8:30-8:45 |
Opening address |
K. Sueoka
|
| 8:45-9:15 |
In Remembrance of
Prof. Jan Vanhellemont |
chair: K.
Sueoka, T. Taishi
|
| |
8:15-
9:15 |
K. Sueoka
(Okayama Pref. Univ.), T. Taishi
(Shinshu Univ.), et al.
|
|
| 9:15-10:25 |
Silicon
Crystals and Wafers
|
chair: S.
Samata, H. Fujimori
|
| |
9:15- 9:55
|
K. Nakamura
(Okayama Pref. Univ.)
|
The Effect
of Impurities and Thermal Stress on
Point Defects
and the Grown-in Defect Formation during
Single Crystal Silicon growth from a
melt
|
| |
9:55-10:25
|
R. Yokoyama
(SUMCO/Kyushu Univ.)
|
Time
Dependent Behavior of the Melt Flow in
the 300mm Silicon Czochralski Growth
with a Transverse Magnetic Field
|
| 10:40-12:30 |
Defects, Impurity,
Gettering and Characterization |
chair: K.
Kakimoto, K. Kashima
|
| |
10:40-11:20 |
G. Kissinger (IHP GmbH)
|
On the
impact of deposited nitride
layers on oxide precipitation in
Czochralski silicon
|
| |
11:20-12:00 |
M. Sluydts (Ghent Univ.)
|
The road to
accuracy: machine-learning-accelerated silicon ab initio simulations
|
| |
12:00-12:30 |
T. Horikawa
(GrobalWafers Japan)
|
Analysis of
Oxygen Precipitates by High-parallel
X-ray Diffuse Scattering
|
| 13:30-15:40 |
Defects, Impurity,
Gettering and Characterization
|
chair: M.
Tajima, N. Fukata
|
| |
13:30-14:10 |
E. Simoen
(IMEC)
|
Metal
contamination in semiconductor devices:
a never ending story?
|
| |
14:10-14:40 |
R. Sugie
(TORAY Research Center)
|
Semi-quantitative
analysis of process-induced defects in
silicon devices by cathodoluminescence
|
| |
14:40-15:10 |
N. Mitsugi
(SUMCO)
|
Novel
Measurement Methods for Low Carbon
Concentration in Silicon using DLTS and
room temperature PL
|
|
15:10-15:40 |
Y. Nagai (GrobalWafers
Japan)
|
Reduction of carbon
during crystal growth and impact of
carbon on bulk lifetime of Si crystal
|
20
Nov. （Tue）
| 8:30-10:50 |
Power Devices
and Materials
|
chair:
H. Yamada-Kaneta, H. Yamamoto
|
| |
8:30- 9:10 |
H. Kubota
(Kumamoto Univ.)
|
New
cleanroom technology realizing Japanese
semiconductor mass production under
innovative energy saving |
| |
9:10- 9:50 |
G. Wachutka
(Tech. Univ. Munich)
|
Virtual
Prototyping of High Power Devices and
Modules |
| |
9:50-10:20 |
S.
Nishizawa (Kyushu Univ.)
|
Future
Power Devices and Semiconductor Wafer
Materials |
|
10:20-10:50 |
T. Minato (Mitsubishi
Electric) |
Si wafer material as
key issue for high voltage bipolar
power device: Effects of residual
oxygen and carbon in FZ, MCZ and
Epitaxy |
| 11:05-12:35 |
Post-Silicon Power Devices and
Materials
|
chair: H.
Tsuchida, T. Taishi
|
| |
11:05-11:35 |
T.
Mitani (AIST) |
Solution
growth of 4H-SiC bulk crystal: Effect
of additives on step structures of
4H-SiC crystals |
| |
11:35-12:05 |
K. Sasaki (Novel Crystal
Technology)
|
Development
of Ga2O3 vertical trench SBDs and
FETs
|
| |
12:05-12:35 |
Y. Ishikawa (JFCC)
|
Characterization of
dislocations in wide bandgap
semiconductors
|
| 18:00-21:00 |
Banquet (Young
Researcher Poster Award)
|
21
Nov. （Wed）
| 8:30-10:40 |
Silicon Solar Cells
|
chair: S.
Binetti, K. Tanahashi
|
| |
8:30- 9:10 |
S. Binetti
(Univ. Milano-Bicocca)
|
Photoluminescence
and infrared spectroscopy for impurities
identification in silicon for
photovoltaic applications |
| |
9:10- 9:40 |
A. Ogura
(Meiji Univ.)
|
Research on
crystalline Si solar cells by
universities in Japan under NEDO
support
|
| |
9:40-10:10 |
K.
Kutsukake (RIKEN)
|
Generation
and propagation of defects in
multicrystalline silicon for solar cells
|
|
10:10-10:40 |
T. Suemasu
(Univ. Tsukuba)
|
Present status and future prospect of BaSi2 solar cells
|
| 10:55-12:35 |
Imaging Sensor
Devices and Materials |
chair: K.
Kurita, H. Takahashi
|
|
10:55-11:35 |
S. Kawahito
(Shizuoka Univ.)
|
Recent Progress of Image
Sensor Device and Technology
|
|
11:35-12:05 |
M. Goto (NHK) |
Pixel-Parallel
Three-Dimensional Integrated CMOS Image
Sensors by Using Direct Bonding of
Silicon-on-Insulator Wafers for
Next-Generation Television Systems
|
|
12:05-12:35 |
T.
Yamaguchi (Renesas Electronics)
|
Investigation
of Implantation Damage Recovery and
Gettering Technology for CMOS Image
Sensors
|
| 13:00-14:30 |
Imaging Sensor
Devices and Materials
|
chair:A.
Ogura, T. Shimura
|
| |
13:00-13:30 |
Y. Sato
(Panasonic)
|
Characterization of Residual Defects Created in Si Substrates |
| |
13:30-14:00 |
T. Shoyama
(Cannon)
|
Influence of various
impurities on performance of CMOS image |
| |
14:00-14:30 |
R. Okuyama
(SUMCO)
|
Diffusion behavior of
hydrogen in molecular ion
implanted silicon epitaxial wafers for
advanced CMOS image sensor
|
| 14:30-14:45 |
Closing
remarks |
K. Sueoka
|
|
|
