FIB/SEM

This is a shared use device in the university.

Results of EBSP for mc-Si

Expansion of Stacking Faults in 4H-SiC中

Horizontal dark lines, which are the intersecting lines between a Stacking Fault and the surface, is elongated by electron beam irradiation.

Equipment for Spreading Resistance Measurement

Remote Plasma Irradiation

MBE equipment

We deposited various SiGe epitaxial films on Si substrate.